Effect of Doping Density and Parasitic Resistances on The Performance of Perovskite Solar Cells-based Graphene Oxide as Hole Transport Layer by SCAPS-1D

Abstract

Perovskite solar cells (PSCs) have demonstrated remarkable improvement and promise to be produced as large-scale, low-cost devices. Several resistive losses, such as the loss current, the trapping, and the recombination of charge carriers, significantly inhibited the performance of PSCs. Typically, the series resistance (R_S) and shunt resistance (R_SH) of the devices influence these kinds of losses. In this study, we conduct a simulation analysis to investigate the effect of doping density and parasitic resistances (R_S and R_SH) on the performance of PSCs-based graphene oxide (GO) as a hole transport layer (HTL) using the SCAPS-1D. The doping density variations in HTL demonstrate improved power conversion efficiency (PCE) and fill factor (FF) as the doping density increases. Both R_S and R_SH significantly affect the PSC performance, as they control the shape and slopes of the current density (J-V) characteristic. The optimization method produced impressive results, including an open-circuit voltage of 0.94 V, a short-circuit current density of 22.51 mA.cm^−2, a fill factor of 78.92%, and a power conversion efficiency of 16.75%. This study leads to a basic understanding of the physics of PSC devices. The proposed design provides a systematic analysis method for photovoltaic science and technology.